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US 8,941,123 B2Granted
Local interconnects by metal-III-V alloy wiring in semi-insulating III-V substrates
AssigneeInternational Business Machines Corporation
InventorsGuy Cohen, Cyril Cabral, Jr., Anirban Basu, Jr.
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Abstract
A structure and method of producing a semiconductor structure including a semi-insulating semiconductor layer, a plurality of isolated devices formed over the semi-insulating semiconductor layer, and a metal-semiconductor alloy region formed in the semi-insulating semiconductor layer, where the metal-semiconductor alloy region electrically connects two or more of the isolated devices.
Claims18
A semiconductor structure, comprising:
- a semi-insulating semiconductor layer;
- a plurality of isolated devices formed over the semi-insulating semiconductor layer;
- and
- a metal-semiconductor alloy region formed in the semi-insulating semiconductor layer,
- wherein the metal-semiconductor alloy region electrically connects two or more of the isolated devices, and
- wherein the metal-semiconductor alloy region comprises one of Ni, Co, Pd, Pt, Ti and alloys thereof alloyed with InP.
3 more elements
A semiconductor structure, comprising:
- a semi-insulating semiconductor layer;
- a plurality of isolated devices formed over the semi-insulating semiconductor layer;
- a metal-semiconductor alloy region formed in the semi-insulating semiconductor layer, wherein the metal-semiconductor alloy region electrically connects two or more of the isolated devices;
- and
- a semiconductor layer on which the semi-insulating semiconductor layer is disposed.
2 more elements
A method of forming a semiconductor structure, the method comprising:
- providing a semi-insulating semiconductor layer including a plurality of isolated devices fixated thereon;
- and
- alloying a metal with a portion of the semi-insulating semiconductor layer so as to form a metal-semiconductor alloy region electrically connecting at least two of the isolated devices,
- wherein the semi-insulating semiconductor layer comprises one of iron-doped and chromium-doped InP.
1 more element
Dependencies are inferred from the claim text.