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US 8,941,122 B2Granted
Silicon carbide semiconductor device and method of manufacturing the same
AssigneeDenso Corporation
InventorsJun Kawai, Norihito Tokura, Kazuhiko Sugiura
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Abstract
In a manufacturing method of a silicon carbide semiconductor device, a semiconductor substrate made of single crystal silicon carbide is prepared. At a portion of the semiconductor substrate where a first electrode is to be formed, a metal thin film made of electrode material including an impurity is formed. After the metal thin film is formed, the first electrode including a metal reaction layer in which the impurity is introduced is formed by irradiating the metal thin film with a laser light.
Claims1
A silicon carbide semiconductor device comprising:
- a semiconductor layer that has a main surface and a rear surface being an opposite surface of the main surface and is made of single crystal silicon carbide;
- and
- a first electrode that forms an ohmic junction with the semiconductor substrate,
- wherein a junction portion of the first electrode with the semiconductor substrate is formed of a metal reaction layer in which an impurity included in the first electrode is introduced and a metal atom that forms the first electrode reacts with at least one of carbon or silicon that forms the semiconductor substrate, and
- wherein, in the metal reaction layer, a diffusion depth of the impurity and a diffusion depth of the metal atom are the same.
2 more elements
Dependencies are inferred from the claim text.