Back to results
US 8,941,116 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeFujitsu Limited
InventorTadahiro Imada
Life of this patent
Estimating the term…
Abstract
In an aspect of a semiconductor device, there are provided a substrate, a transistor including an electron transit layer and an electron supply layer formed over the substrate, a nitride semiconductor layer formed over the substrate and connected to a gate of the transistor, and a controller controlling electric charges moving in the nitride semiconductor layer.
Claims12
A semiconductor device, comprising:
- a substrate;
- a transistor comprising a gate electrode, an electron transit layer and an electron supply layer formed over the substrate;
- an insulating film formed over the electron supply layer, the gate electrode comprising a portion over the insulating film;
- a nitride semiconductor layer over the insulating film;
- a first electrode and a second electrode formed over the nitride semiconductor layer, the gate electrode being located between the first electrode and the second electrode in planar view;
- a first signal line formed over the nitride semiconductor layer between the first electrode and the gate electrode in planar view;
- and
- a second signal line formed over the nitride semiconductor layer between the second electrode and the gate electrode in planar view.
5 more elements
A power supply apparatus, comprising
- a semiconductor device which comprises:
- a substrate;
- a transistor comprising a gate electrode, an electron transit layer and an electron supply layer formed over the substrate;
- an insulating film formed over the electron supply layer, the gate electrode comprising a portion over the insulating film;
- a nitride semiconductor layer over the insulating film;
- a first electrode and a second electrode formed over the nitride semiconductor layer, the gate electrode being located between the first electrode and the second electrode in planar view;
- a first signal line formed over the nitride semiconductor layer between the first electrode and the gate electrode in planar view;
- and
- a second signal line formed over the nitride semiconductor layer between the second electrode and the gate electrode in planar view.
6 more elements
A method of manufacturing a semiconductor device, comprising:
- forming a transistor over a substrate, the transistor comprising a gate electrode, an electron transit layer and an electron supply layer;
- forming an insulating film over the electron supply layer, the gate electrode comprising a portion over the insulating film;
- forming a nitride semiconductor layer over the insulating film;
- forming a first electrode and a second electrode over the nitride semiconductor layer, the gate electrode being located between the first electrode and the second electrode in planar view;
- forming a first signal line over the nitride semiconductor layer between the first electrode and the gate electrode in planar view;
- and
- forming a second signal line over the nitride semiconductor layer between the second electrode and the gate electrode in planar view.
4 more elements
Dependencies are inferred from the claim text.