Back to results
US 8,941,107 B2Granted
Power diode, rectifier, and semiconductor device including the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
Life of this patent
Estimating the term…
Loading patent…
Loading patent…
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
Estimating the term…
With a non-linear element (e.g., a diode) with small reverse saturation current, a power diode or rectifier is provided. A non-linear element includes a first electrode provided over a substrate, an oxide semiconductor film provided on and in contact with the first electrode and having a concentration of hydrogen of 5×1019 atoms/cm3 or less, a second electrode provided on and in contact with the oxide semiconductor film, a gate insulating film covering the first electrode, the oxide semiconductor film, and the second electrode, and third electrodes provided in contact with the gate insulating film and facing each other with the first electrode, the oxide semiconductor film, and the second electrode interposed therebetween or a third electrode provided in contact with the gate insulating film and surrounding the second electrode. The third electrodes are connected to the first electrode or the second electrode. With the non-linear element, a power diode or a rectifier is formed.
A rectifier comprising a first non-linear element and a second non-linear element, each of the first non-linear element and the second non-linear element comprising:
A rectifier comprising a first non-linear element and a second non-linear element, each of the first non-linear element and the second non-linear element comprising:
Dependencies are inferred from the claim text.