Zinc oxide based compound semiconductor light emitting device
AssigneeRohm Co., Ltd.
InventorKen Nakahara
Life of this patent
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Abstract
There is provided a semiconductor light emitting device in which light emitting efficiency is totally improved in case of emitting a light having a short wavelength of 400 nm or less by raising internal quantum efficiency by enhancing crystallinity of semiconductor layers laminated and by raising external quantum efficiency by taking out the light emitted by preventing the light emitted from being absorbed in the substrate or the like, as much as possible. In case of laminating ZnO compound semiconductor layers (2 to 6) so as to form a light emitting layer forming portion (7) for emitting the light having a wavelength of 400 nm or less on a substrate (1), a substrate composed of MgxZn1-xO (0≦x≦0.5) is used as the substrate (1).
Claims4
A zinc oxide based compound semiconductor light emitting device comprising
- a substrate having opposed front and back surfaces thereof,
- a semiconductor lamination portion formed on the front surface of the substrate by laminating ZnO based compound semiconductor layers so as to form a light emitting layer forming portion configured to emit light of a wavelength of 400 nm or less, and
- first and second electrodes, the first electrode provided on the semiconductor lamination portion, and the second electrode provided on the back surface of the substrate,
- wherein the substrate is made of MgxZn1-xO(0≦x≦0.5).
Dependencies are inferred from the claim text.