Back to results
US 8,941,101 B2Granted
Organic light emitting diode display and method for manufacturing organic light emitting diode display
AssigneeSamsung Display Co., Ltd.
InventorKi-Yeol Byun
Life of this patent
Estimating the term…
Abstract
An organic light emitting diode (OLED) display is disclosed. In one aspect, the display includes a substrate, an organic light emitting element positioned on the substrate, and a first thin film transistor (TFT) connected to the organic light emitting element and having a driving channel region including at least one groove.
Claims16
An organic light emitting diode (OLED) display comprising:
- a substrate;
- an organic light emitting element positioned over the substrate;
- and
- a first thin film transistor electrically connected to the organic light emitting element and having a driving channel region, wherein at least one groove is formed in the driving channel region and wherein the groove only partially penetrates the driving channel region.
1 more element
A method of manufacturing an organic light emitting diode (OLED) display, comprising:
- forming a first thin film transistor including a driving channel region on a substrate, wherein at least one groove is formed in the driving channel region and wherein the groove only partially penetrates the driving channel region;
- and
- forming an organic light emitting element electrically connected to the first thin film transistor.
A method of manufacturing an organic light emitting diode (OLED) display, comprising:
- forming a first thin film transistor including a driving channel region on a substrate, wherein at least one groove is formed in the driving channel region;
- forming an organic light emitting element electrically connected to the first thin film transistor;
- and
- forming a second thin film transistor electrically connected to the first thin film transistor and including a switching channel region,
- wherein the first thin film transistor and the second thin film transistor are formed by the same process and wherein the forming of the first thin film transistor and the forming of the second thin film transistor include:
- forming a driving active layer and a switching active layer over the substrate;
- forming a mask insulation layer including an opening positioned corresponding to a position where a groove is formed on the driving active layer and the switching active layer;
- dry-etching the driving active layer through the opening to form a preliminary groove at the driving active layer,
- dry-etching the driving active layer through the opening to expand the preliminary groove thereby forming the groove;
- and
- removing the mask insulation layer.
8 more elements
Dependencies are inferred from the claim text.