Methods for integrating and forming optically transparent devices on surfaces
AssigneeHRL Laboratories, LLC
InventorsHyok J. Song, James H. Schaffner, Jeong-Sun Moon, Kyung-Ah Son
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Abstract
An apparatus, system, and/or method are described to enable optically transparent reconfigurable integrated electrical components, such as antennas and RF circuits to be integrated into an optically transparent host platform, such as glass. In one embodiment, an Ag NW film may be configured as a transparent conductor for antennas and/or as interconnects for passive circuit components, such as capacitors or resistors. Ag NW may also be used as transmission lines and/or interconnect overlays for devices. A graphene film may also be configured as active channel material for making active RF devices, such as amplifiers and switches.
Claims32
A device, comprising:
- a non-opaque substrate;
- an optically transparent active device on the substrate, wherein the optically transparent active device comprises a plurality of silver nanowire contacts and a graphene channel;
- a silver nanowire film, the silver nanowire film disposed on at least a portion of the substrate;
- and
- a dielectric metal oxide disposed on at least a portion of the silver nanowire film;
- wherein the dielectric metal oxide comprises one of aluminum oxide (Al2O3), silicon dioxide (SiO2), and hafnium oxide (HfO2).
A method of forming a passive electrical device, comprising:
- receiving a non-opaque substrate;
- forming graphene on a portion of the substrate;
- forming a silver nanowire film on the substrate;
- etching the silver nanowire film;
- and
- coating a portion of the silver nanowire film with a dielectric material, wherein the dielectric material is not graphene.
A device, comprising
- a non-opaque substrate;
- a gate electrode on the substrate;
- an insulator on the gate electrode;
- a graphene film on the insulator;
- a source contact formed from silver nanowire on a first portion of the graphene film;
- and
- a drain contact formed from silver nanowire on a second portion of the graphene film.
A method of forming an electrical device, comprising:
- receiving a non-opaque substrate;
- forming a graphene film on a portion of the substrate;
- and
- forming a plurality of contacts on the graphene film from silver nanowire.
A method of forming an electrical device, comprising:
- receiving a non-opaque substrate;
- forming a gate electrode on a portion of the substrate;
- forming an insulator over the gate electrode;
- forming a graphene film on a portion of the insulator;
- forming a source contact from silver nanowire on a first portion of the graphene film;
- and
- forming a drain contact from silver nanowire on a second portion of the graphene film.
An electrical device comprising:
- a non-opaque substrate;
- a graphene layer on the substrate;
- an insulator on the graphene layer;
- a gate on the insulator;
- a source contact comprising silver nanowire on a first portion of the graphene film and insulated from the gate by the insulator;
- and
- a drain contact comprising silver nanowire on a second portion of the graphene film and insulated from the gate by the insulator.
A method of forming an electrical device comprising:
- receiving one of a substantially transparent and transparent substrate;
- forming a graphene layer on the substrate;
- forming an insulator on the graphene layer;
- forming a gate on the insulator;
- forming a source contact formed from silver nanowire on a first portion of the graphene film and insulated from the gate by the insulator;
- and
- forming a drain contact formed from silver nanowire on a second portion of the graphene film and insulated from the gate by the insulator.
Dependencies are inferred from the claim text.