Gate electrode comprising aluminum and zirconium

A semiconductor device, comprising:

• a gate electrode comprising Al and Zr, and being formed on a substrate;
• a gate insulating film comprising Al and Zr, and covering at least an upper surface of the gate electrode;
• and
• an insulator layer formed on the substrate surrounding the gate electrode, wherein
• the gate electrode contains Mg at a concentration of not more than 0.01 mass %.

A semiconductor device, comprising:

• a gate electrode comprising Al and Zr, and being formed on a substrate;
• a gate insulating film comprising Al and Zr, and covering at least an upper surface of the gate electrode, and
• an insulator layer formed on the substrate surrounding the gate electrode, wherein
• the gate electrode contains Mg at a concentration of not more than 0.01 mass %, and from 0.01 mass % (exclusive) to 0.15 mass % (inclusive) Zr.

A semiconductor device, comprising:

• a gate electrode comprising Al and Zr, and being formed on a substrate;
• a gate insulating film comprising Al and Zr, and covering at least an upper surface of the gate electrode;
• and
• an insulator layer formed on the substrate surrounding the gate electrode, wherein
• the substrate includes a substantially transparent insulator substrate, and the insulator layer includes a substantially transparent resin layer.

A method of manufacturing a semiconductor device comprising a gate electrode, a gate insulating film, an insulator layer, a semiconductor layer, a source electrode and a drain electrode, the method comprising the steps of:

• forming the gate electrode on a substrate, said gate electrode comprising Al and Zr;
• forming the gate insulating film by anodizing a surface of the gate electrode by an anodizing method using a non-aqueous solution;
• and
• forming the insulator layer on the substrate surrounding the gate electrode.

A method of manufacturing a semiconductor device, comprising the steps of:

• forming a gate electrode comprising Al and Zr on a substrate;
• forming a gate insulating film by anodizing a surface of the gate electrode by an anodizing method using a non-aqueous solution;
• and
• forming an insulator layer on the substrate surrounding the gate electrode, wherein
• the gate electrodes contains Mg at a concentration of not more than 0.01 mass %.

A method of manufacturing a semiconductor device, comprising the steps of:

• forming a gate electrode comprising Al and Zr on a substrate;
• forming a gate insulating film by anodizing a surface of the gate electrode by an anodizing method using a non-aqueous solution;
• and
• forming an insulator layer on the substrate surrounding the gate electrode, wherein
• the gate electrode contains Mg at a concentration of not more than 0.01 mass % and Zr at a concentration of 0.01 mass % (exclusive) to 0.15 mass % (inclusive).

A method of manufacturing a semiconductor device, comprising the steps of:

• forming a gate electrode comprising Al and Zr on a substrate;
• forming a gate insulating film by anodizing a surface of the gate electrode by an anodizing method using a non-aqueous solution;
• and
• forming an insulator layer on the substrate surrounding the gate electrode, wherein
• said step of forming the insulator layer comprises (i) forming a material which forms the insulator layer to extend from a position on the substrate to a position on the gate electrode, and (ii) removing a surface of the material that forms the insulator layer using a plasma containing oxygen.

A display device comprising a semiconductor device comprising:

• a gate electrode comprising Al and Zr, and being formed on a substrate;
• a gate insulating film comprising Al and Zr, and covering at least an upper surface of the gate electrode;
• and
• an insulator layer formed on the substrate surrounding the gate electrode.