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US 8,941,090 B2Granted
Resistive memory device, method of fabricating the same, and memory apparatus and data processing system having the same
AssigneeSK hynix Inc.
InventorSung Min Lee
Life of this patent
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Abstract
A resistive memory device capable of implementing a multi-level cell, a method of fabricating the same, and a memory apparatus and data processing system including the same are provided. The resistive memory device includes a lower electrode, a first phase-change material layer formed over the lower electrode, a second phase-change material layer formed to surround an outer sidewall of the first phase-change material layer, and an upper electrode formed over the first phase-change material layer and the second phase-change material layer.
Claims5
A resistive memory device, comprising:
- a lower electrode;
- a first phase-change material layer formed over the lower electrode;
- a second phase-change material layer formed to surround an outer sidewall of the first phase-change material layer;
- and
- an upper electrode formed over the first phase-change material layer and the second phase-change material layer,
- wherein the second phase-change material layer is configured to have lower resistance than the first phase-change material.
3 more elements
Dependencies are inferred from the claim text.