Resistive switching devices and methods of formation thereof
AssigneeAdesto Technologies Corporation
InventorsChakravarthy Gopalan, Jeffrey Shields, Venkatesh Gopinath, Janet Siao-Yian Wang, Kuei-Chang Tsai
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Abstract
In accordance with an embodiment of the present invention, a resistive switching device includes an opening disposed within a first dielectric layer, a conductive barrier layer disposed on sidewalls of the opening, a fill material including an inert material filling the opening. A solid electrolyte layer is disposed over the opening. The solid electrolyte contacts the fill material but not the conductive barrier layer. A top electrode is disposed over the solid electrolyte.
Claims15
A resistive switching device comprising:
- an opening disposed within a first dielectric layer;
- a conductive barrier layer disposed on sidewalls of the opening;
- a fill material comprising an inert material filling the opening and the fill material extends above the conductive barrier layer so that a top surface of the fill material is above the conductive barrier, wherein the conductive barrier comprises a metal nitride;
- a solid electrolyte layer disposed over the opening, the solid electrolyte layer contacting the fill material but not the conductive barrier layer, wherein the solid electrolyte layer overlaps with an entire top surface of the fill material and the conductive barrier layer;
- and
- a top electrode disposed over the solid electrolyte.
A resistive switching device comprising:
- an opening disposed within a first dielectric layer;
- a conductive barrier layer disposed on sidewalls of the opening, wherein the conductive barrier comprises a metal nitride;
- a fill material comprising an inert material filling the opening, wherein the fill material extends above the conductive barrier layer so that a top surface of the fill material is above the conductive barrier layer;
- a solid electrolyte layer disposed over the opening, the solid electrolyte layer contacting the fill material but not the conductive barrier layer;
- and
- a top electrode disposed over the solid electrolyte.
A resistive switching device comprising:
- an opening disposed within a first dielectric layer;
- a conductive barrier layer disposed on sidewalls of the opening, wherein the conductive barrier comprises a metal nitride;
- a fill material comprising an inert material filling the opening, wherein the fill material extends above the conductive barrier layer so that a top surface of the fill material is above the conductive barrier layer;
- a solid electrolyte layer disposed over the opening, the solid electrolyte layer contacting the fill material but not the conductive barrier layer, wherein the solid electrolyte layer forms a switching layer of a resistive metal oxide memory, or a conductive bridging random access memory;
- and
- a top electrode disposed over the solid electrolyte.
Dependencies are inferred from the claim text.