Back to results
US 8,941,088 B2Granted
Nonvolatile memory with resistance change layer
AssigneeKabushiki Kaisha Toshiba
InventorsKensuke Takano, Yoshio Ozawa, Katsuyuki Sekine, Junichi Wada
Life of this patent
Estimating the term…
Abstract
A nonvolatile memory device includes: a first conductive layer; a second conductive layer; a first resistance change layer provided between the first conductive layer and the second conductive layer and having an electrical resistance changing with at least one of an applied electric field and a passed current; and a first lateral layer provided on a lateral surface of the first resistance change layer and having an oxygen concentration higher than an oxygen concentration in the first resistance change layer.
Claims17
A nonvolatile memory device comprising:
- a first conductive layer;
- a second conductive layer;
- a resistance change layer provided between the first conductive layer and the second conductive layer and having an electrical resistance configured to change with at least one of an applied electric field and a passed current, the resistance change layer having a lateral surface intersecting a plane perpendicular to a first direction from the first conductive layer toward the second conductive layer;
- and
- a lateral layer contacting the lateral surface of the resistance change layer, a second direction from the lateral layer toward the lateral surface of the resistance change layer being parallel to the plane and the first lateral layer having an oxygen concentration higher than an oxygen concentration in the first resistance change layer,
- the resistance change layer having a first portion, a second portion provided between the first portion and the second conductive layer, and a third portion provided between the first portion and the second portion, and
- a length of the third portion along the second direction being longer than a length of the second portion along the second direction.
4 more elements
Dependencies are inferred from the claim text.