Photoelectric conversion device
AssigneeNational University Corporation Tohoku University
InventorTadahiro Ohmi
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Abstract
It is an object of the present invention to provide a photoelectric conversion device having a passivation layer suitable for a structure provided with a heat dissipation mechanism. A photoelectric conversion device 1 of the present invention has a first electrode layer 20, a single power generation laminate 22 having a nip structure formed of a-Si (amorphous silicon), and a second electrode layer 26 of Al formed on the power generation laminate 22 through a nickel layer 24. On the second electrode layer 26, a passivation layer 28 constructed of a material containing SiCN is formed. On the passivation layer 28, a heat sink 30 (for example, formed of Al) is mounted through an adhesive layer 29.
Claims7
A photoelectric conversion device comprising:
- a first electrode layer;
- a second electrode layer including Al;
- one or a plurality of power generation laminates provided between the first and the second electrode layers, for converting an energy of incident light into an electric energy;
- a heat dissipation portion including Al provided to the second electrode layer;
- and
- a passivation layer provided between the heat dissipation portion and the second electrode layer in a portion brought into contact with the heat dissipation portion and the second electrode layer, and constructed of a material containing SiCN having a composition of Carbon added thereto in an amount of 2 at % to 10 at %.
Dependencies are inferred from the claim text.