Thermoelectric device and method for fabricating the same

A thermoelectric device array comprising:

• first and second thermoelectric devices each including
• first and second electrodes;
• a first leg coupled to the first electrode and including two or more first semiconductor patterns and one or more first barrier patterns;
• a second leg coupled to the second electrode and including two or more second semiconductor patterns and one or more second barrier patterns;
• and
• a common electrode coupled to the first leg and the second leg,
• wherein the first electrode of each thermoelectric device is electrically connected to the second electrode of an adjacent thermoelectric device, and an insulating material is provided between the common electrodes of the thermoelectric devices,
• wherein the first barrier pattern has a lower thermal conductivity and a higher electric conductivity than the first semiconductor patterns,
• wherein the second barrier pattern has a lower thermal conductivity and a higher electric conductivity than the second semiconductor patterns,
• wherein the first semiconductor patterns of the first thermoelectric device are separated from each other by the first barrier pattern, and the second semiconductor patterns of the first thermoelectric device are separated from each other by the second barrier pattern,
• wherein the first barrier pattern and the second barrier pattern each comprise one or more selected from the group consisting of a Si-metal alloy, a Ge-metal alloy, and a Si—Ge-metal alloy, and
• wherein the first barrier pattern forms an ohmic contact with the first semiconductor patterns, and the second barrier pattern forms an ohmic contact with the second semiconductor patterns.

A thermoelectric device comprising:

• first and second electrodes;
• a first leg coupled to the first electrode and including two or more first semiconductor patterns and one or more first barrier patterns;
• a second leg coupled to the second electrode and including two or more second semiconductor patterns and one or more second barrier patterns;
• and
• a common electrode coupled to the first leg and the second leg,
• wherein the first barrier pattern has a lower thermal conductivity and a higher electric conductivity than the first semiconductor patterns,
• wherein the second barrier pattern has a lower thermal conductivity and a higher electric conductivity than the second semiconductor patterns,
• wherein the first semiconductor patterns are separated from each other by the first barrier pattern, and the second semiconductor patterns are separated from each other by the second barrier pattern,
• wherein each of the first barrier pattern and the second barrier pattern is a metal silicide layer, and
• wherein the first barrier pattern forms an ohmic contact with the first semiconductor patterns, and the second barrier pattern forms an ohmic contact with the second semiconductor patterns.