Process for producing silicon and oxide films from organoaminosilane precursors

A composition for depositing a silicon-containing film by a vapor deposition process, the composition comprising:

• an organoaminosilane precursor represented by the following formula A:
• wherein R is selected from a C1-C10 linear, branched, or cyclic, saturated or unsaturated alkyl group with or without substituents;
• a C5-C10 aromatic group with or without substituents, a C3-C10 heterocyclic group with or without substituents and R1 is selected from a C3-C10 linear, branched, cyclic, saturated or unsaturated alkyl group with or without substituents;
• a C5-C10 aromatic group with or without substituents, a C3-C10 heterocyclic group with or without substituents, a hydrogen atom, a silyl group with substituents and wherein R and R1 in formula A also being combinable into a cyclic group;
• a gas selected from the group consisting of an inert gas and nitrogen.

A precursor formulation comprising:

• an organoaminosilane represented by the formulae:
• wherein R is selected from a C1-C10 linear, branched, or cyclic, saturated or unsaturated alkyl group with or without substituents;
• a C5-C10 aromatic group with or without substituents, a C3-C10 heterocyclic group with or without substituents, or a silyl group in formula C with or without substituents, R1 is selected from a C3-C10 linear, branched, cyclic, saturated or unsaturated alkyl group with or without substituents;
• a C5-C10 aromatic group with or without substituents, a C3-C10 heterocyclic group with or without substituents, a hydrogen atom, a silyl group with substituents and wherein R and R1 in formula A also being combinable into a cyclic group comprising from 2 to 6 carbon atoms and R2 representing a single bond, (CH2), chain, a ring, C3-C10 branched alkyl, SiR2, or SiH2 into a deposition chamber;
• and a solvent.