Method for surface treatment on a metal oxide and method for preparing a thin film transistor
AssigneeBoe Technology Group Co., Ltd.
InventorsXiaodi Liu, Jun Cheng
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Abstract
Embodiments of the present invention provide a method for surface treatment on a metal oxide and a method for preparing a thin film transistor. The method for surface treatment on a metal oxide comprises: utilizing plasma to perform a surface treatment on a device to be processed; the plasma comprises a mixture gas of an F-based gas and O2, and the device to be processed is a metal oxide or a manufactured article coated with a metal oxide. The embodiments provided by the present invention can reduce the contact resistance between a metal oxide and other electrodes, and improve the effect of ohmic contact of the metal oxide.
Claims14
A method for surface treatment on a metal oxide semiconductor, comprising:
- utilizing plasma to perform a surface treatment on a device to be processed;
- and
- wherein the plasma comprises a mixture gas of an F-based gas and O2, and the device to be processed is a metal oxide semiconductor layer or a manufactured article coated with the metal oxide semiconductor to allow concentration of oxygen vacancy therein being increased.
A method for preparing a thin film transistor, comprising:
- preparing a gate electrode, a gate insulating layer, a channel layer, a blocking layer, a source electrode, a drain electrode and a passivation protective layer on a substrate in order, preparation of the channel layer comprising:
- utilizing plasma to perform surface treatment on the channel layer to allow concentration of oxygen vacancy in the channel layer being increased;
- the plasma comprises a mixture gas of an F-based gas and O2, wherein the material of the channel layer s a metal oxide semiconductor.
A method for preparing a thin film transistor, comprising:
- preparing a gate electrode, a gate insulating layer, a channel layer, a blocking layer, a source electrode, a drain electrode and a passivation protective layer on a substrate in order, preparation of the channel layer comprising:
- utilizing plasma to perform surface treatment on the channel layer to allow concentration of oxygen vacancy the channel layer being increased;
- the plasma comprises a mixture gas of an F-based gas and O2, wherein the material of the channel layer is a metal oxide semiconductor;
- wherein the F-based gas is CF4;
- an O2 content η in the mixture gas of CF4 and O2 is in a range of 0<η≦38%;
- a pressure Y of the mixture gas of CF4 and O2 is in a range of 40-400 mTorr;
- a period of time “t” in which the plasma acts on the channel layer to be processed is in a range of 5-120 s;
- and
- a power P of the RF is in a range of 200-1500 W.
Dependencies are inferred from the claim text.