Method of manufacturing interconnection and semiconductor device

A method of manufacturing a semiconductor device, the method comprising:

• forming a via which penetrates an interlayer insulation film on a substrate;
• forming an underlying film in the via;
• removing the underlying film on a bottom part of the via;
• forming a catalyst metal inactivation film on the underlying film;
• removing the catalyst metal inactivation film on the bottom part of the via;
• forming a catalyst metal film on the bottom part of the via on which the catalyst metal inactivation film is removed;
• performing a first plasma treatment and a second plasma treatment using a gas not containing carbon on a member in which the catalyst metal film is formed;
• forming a graphite layer on the catalyst metal film after the first and second plasma treatment processes;
• and
• causing a growth of a carbon nanotube from the catalyst metal film on which the graphite layer is formed,
• wherein the method of manufacturing an interconnection of the semiconductor device employs a method of manufacturing an interconnection in which a plasma gas pressure of the first plasma treatment is higher than that of the second plasma treatment.