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US 8,940,625 B2Granted
Low temperature polysilicon thin film and manufacturing method thereof
AssigneeBoe Technology Group Co., Ltd.
InventorsXueyan Tian, Chunping Long, Jiangfeng Yao
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Abstract
An embodiment of the present invention relates to a low temperature polysilicon thin film and a manufacturing method thereof. The manufacturing method comprises: forming a buffer layer on a substrate (S11); forming a seed layer comprising a plurality of uniformly distributed crystal nuclei on the buffer layer by using a patterning process (S12); forming an amorphous silicon layer on the seed layer (S13); and performing an excimer laser annealing process on the amorphous silicon layer (S14).
Claims11
A manufacturing method of a low temperature polysilicon thin film, comprising:
- forming a buffer layer on a substrate;
- forming a seed layer which comprises a plurality of uniformly distributed crystal nuclei on the buffer layer by using a patterning process;
- forming an amorphous silicon layer on the seed layer;
- and
- performing an excimer laser annealing process on the amorphous silicon layer.
2 more elements
Dependencies are inferred from the claim text.