Bonding method using porosified surfaces for making stacked structures
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsRama Krishna Kotlanka, Rakesh Kumar, Premachandran Chirayarikathuveedu Sankarapillai, Huamao Lin, Pradeep Yelehanka
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Abstract
A bonded device having at least one porosified surface is disclosed. The porosification process introduces nanoporous holes into the microstructure of the bonding surfaces of the devices. The material property of a porosified material is softer as compared to a non-porosified material. For the same bonding conditions, the use of the porosified bonding surfaces enhances the bond strength of the bonded interface as compared to the non-porosified material.
Claims26
A method for bonding semiconductor surfaces comprising:
- providing a first substrate with a first bonding region, wherein the first bonding region comprises a first bonding surface with a porosified region which is formed in the first substrate and is part of first substrate material;
- providing a second substrate with a second bonding region having a second bonding surface, wherein the second bonding surface includes a second conductive contact comprising a TSV contact;
- aligning the second conductive contact of the second bonding surface to be above and within the porosified region of the first bonding surface;
- and
- bonding the second bonding surface with the second conductive contact to the first bonding surface with the porosified region by applying pressure at an elevated temperature.
A method for bonding semiconductor surfaces comprising:
- providing a first substrate with a first bonding region with a first bonding surface, wherein the first bonding surface comprises a porosified surface which is formed in the first substrate and is part of first substrate material;
- providing a second substrate with a second bonding region having a second conductive contact, wherein the second conductive contact comprises a TSV contact;
- aligning the first bonding region with the second bonding region;
- and
- bonding the second conductive contact directly to the porosified surface of the first bonding region by applying pressure at an elevated temperature.
A method of fabricating a MEMS structure comprising:
- providing a first substrate comprising a MEMs device with a first bonding region with a first bonding surface, wherein the first bonding surface comprises a porosified surface;
- providing a second substrate comprising a CMOS device with a second bonding region having a second conductive contact, wherein the second conductive contact comprises a TSV contact;
- aligning the first bonding region with the second bonding region;
- and
- bonding the second conductive contact directly to the porosified surface of the first bonding region by applying pressure at an elevated temperature.
Dependencies are inferred from the claim text.