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US 8,940,615 B2Granted
Method of forming isolation structure
AssigneeUnited Microelectronics Corp.
InventorsTe-Lin Sun, Chien-Liang Lin, Yu-Ren Wang
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Abstract
The present invention provides a method of forming an isolation structure. A substrate is provided, and a trench is formed in the substrate. Next, a semiconductor layer is formed on a surface of the trench. A nitridation is carried out to form a nitridation layer in the semiconductor layer. Lastly, an insulation layer is filled into the trench.
Claims19
A method of forming an isolation structure, comprising:
- providing a substrate;
- forming a trench in the substrate;
- performing a cleaning process to remove an oxide compound on a surface of the trench;
- after the cleaning process, forming a semiconductor layer on the surface of the trench;
- performing a nitridation process upon the semiconductor layer to form a nitridation layer in the semiconductor layer;
- and
- filling the trench with an insulation layer.
4 more elements
Dependencies are inferred from the claim text.