Manufacturing method of trench type power transistor device with super junction
AssigneeAnpec Electronics Corporation
InventorsYung-Fa Lin, Shou-Yi Hsu, Meng-Wei Wu, Chia-Hao Chang
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Abstract
The present invention provides a manufacturing method of a trench type power transistor device with a super junction. First, a substrate of a first conductivity type is provided, and then an epitaxial layer of a second conductive type is formed on the substrate. Next, a through hole is formed in the epitaxial layer, and the through hole penetrates through the epitaxial layer. Two doped drain regions of the first conductivity type are then formed in the epitaxial layer respectively at two sides of the through hole, and the doped drain regions extend from a top surface of the epitaxial layer to be in contact with the substrate.
Claims14
A manufacturing method of a trench type power transistor device with a super junction, comprising:
- providing a substrate of a first conductivity type;
- forming an epitaxial layer of a second conductivity type different from said first conductivity type on said substrate;
- forming at least one through hole penetrating through said epitaxial layer in said epitaxial layer;
- forming two doped drain regions of said first conductivity type in said epitaxial layer respectively at both sides of said through hole, wherein said doped drain regions extend from the upper surface of said epitaxial layer to be in contact with said substrate, and said doped drain regions contact said epitaxial layer;
- filling an insulating layer into said through hole, wherein the upper surface of said insulating layer is lower than the upper surface of said epitaxial layer;
- forming a doped channel region of said second conductivity type respectively in said epitaxial layer at each said side of said through hole on said insulating layer;
- forming a gate structure in said through hole on said insulating layer;
- and
- forming a doped source region of said first conductivity type respectively on each said doped channel region.
A manufacturing method of a trench type power transistor device with a super junction, comprising:
- providing a substrate of first conductivity type;
- forming a first epitaxial layer of a second conductivity type different from said first conductivity type on said substrate;
- forming at least one first through hole extending through said first epitaxial layer in said first epitaxial layer;
- forming two doped drain regions of said first conductivity type respectively in said first epitaxial layer at both sides of said first through hole, wherein said doped drain regions extend from the upper surface of said first epitaxial layer to be in contact with said substrate, and said doped drain regions contact said first epitaxial layer;
- filling up said first through hole with an insulating layer;
- forming a second epitaxial layer of said second conductivity type on said first epitaxial layer and said insulating layer;
- forming at least one second through hole in said second epitaxial layer to expose said insulating layer;
- forming a gate structure in said second through hole;
- and
- forming two doped source regions of said first conductivity type in said second epitaxial layer at both sides of said second through hole.
Dependencies are inferred from the claim text.