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US 8,940,601 B2Granted
Manufacturing method of semiconductor device
AssigneeRenesas Electronics Corporation
InventorsMisato Sakamoto, Youichi Yamamoto, Masayuki Tachikawa, Yoshitake Kato
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Abstract
A manufacturing method of a semiconductor device includes the following steps. Firstly, a lower electrode is formed over a substrate (semiconductor substrate). Successively, the lower electrode is primarily crystallized. Successively, a capacitance dielectric layer is formed over the lower electrode after primarily crystallized. Successively, the capacitance dielectric layer is secondarily crystallized. Then, an upper electrode is formed over the capacitance dielectric layer.
Claims7
A manufacturing method of a semiconductor device comprising:
- forming a lower electrode over a substrate by repeatedly alternating deposition of one of a plurality of layers constituting the lower electrode with application of a primary crystallization treatment to the deposited layer;
- forming a capacitance dielectric layer over said lower electrode;
- secondarily crystallizing said capacitance dielectric layer;
- forming an upper electrode over said capacitance dielectric layer;
- forming an interlayer dielectric layer over said substrate;
- and
- forming a recess in said interlayer dielectric layer,
- wherein said forming said lower electrode includes at least forming said lower electrode over the bottom and the sidewall of said recess, and
- the aspect ratio of said recess is 3 or more.
6 more elements
Dependencies are inferred from the claim text.