In-situ metal gate recess process for self-aligned contact application
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Jung Hsu, Gin-Chen Huang, Yi-An Lin, Neng-Kuo Chen, Sey-Ping Sun, Clement Hsingjen Wann
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Abstract
A method of producing a metal gate structure. The method includes forming a gate structure above a semiconductor substrate and performing one or more chemical metal planarization (CMP) processes to planarize the formed gate structure using a CMP tool. An in situ gate etching process is performed in a CMP cleaner of the CMP tool to form a gate recess. A contact etch stop layer (CESL) can then be deposited in the formed gate recess and one or more CMP processes performed to planarize the CESL.
Claims20
A method of producing a metal gate structure comprising the steps of:
- forming a gate structure above a semiconductor substrate;
- performing one or more chemical metal planarization (CMP) processes to planarize the formed gate structure using a CMP tool;
- performing an in situ gate etching process by subjecting an exposed surface of the gate structure to a liquid chemical etchant to form a gate recess, wherein the liquid chemical etchant includes hydrogen peroxide and an organic acid salt;
- forming a contact etch stop layer (CESL) in the formed gate recess;
- and
- performing one or more CMP processes to planarize the CESL.
A method of producing a metal gate structure comprising the steps of:
- forming a gate structure above a semiconductor substrate;
- performing one or more chemical metal planarization (CMP) processes to planarize the formed gate structure using a CMP tool;
- and
- performing an in situ gate etching process in a CMP cleaner of the CMP tool to form a gate recess, the in situ gate etching process comprising forming a gate recess by subjecting an exposed surface of the gate structure to a liquid chemical etchant, wherein the liquid chemical etchant comprises hydrogen peroxide and an organic acid salt.
A method of producing a metal gate structure comprising the steps of:
- performing one or more chemical metal planarization (CMP) processes using a CMP tool to planarize a gate structure overlying a substrate;
- and
- performing an in situ etching process in a CMP cleaner of the CMP tool to form a gate recess for the planarized gate structure, the in situ gate etching process comprising forming a gate recess by subjecting an exposed surface of the gate structure to a liquid chemical etchant, wherein the liquid chemical etchant comprises hydrogen peroxide and an organic acid salt.
Dependencies are inferred from the claim text.