Method of making structure having a gate stack

A method comprising:

• forming a photoresist layer covering a first portion of a polysilicon gate layer of a structure and exposing a second portion of the polysilicon gate layer of the structure, the structure comprising a drain region, a source region, and a gate stack, the gate stack comprising a gate dielectric layer, a gate conductive layer over the gate dielectric layer, and the polysilicon gate layer directly over the gate conductive layer;
• removing the second portion of the polysilicon gate layer of the structure using the photoresist layer as a mask;
• depositing a metal material on the gate conductive layer, thereby forming a conductive region on the gate conductive layer and adjacent to the first portion of the polysilicon gate layer;
• and
• removing the photoresist layer.