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US 8,940,592 B2Granted
Memories and methods of forming thin-film transistors using hydrogen plasma doping
AssigneeMicron Technology, Inc.
InventorsShu Qin, Haitao Liu, Zhenyu Lu
Life of this patent
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Abstract
Methods of forming thin-film transistors and memories are disclosed. In one such method, polycrystalline silicon is hydrogen plasma doped to form doped polycrystalline silicon. The doped polycrystalline silicon is then annealed. The hydrogen plasma doping and the annealing are decoupled.
Claims23
A method of forming thin-film transistors, comprising:
- hydrogen plasma doping polycrystalline silicon to form doped polycrystalline silicon;
- annealing the doped polycrystalline silicon, wherein the hydrogen plasma doping and the annealing are decoupled;
- in-situ depositing a deposition material;
- and
- removing the deposition material after annealing the doped polycrystalline silicon.
2 more elements
A method of forming thin-film transistors, comprising:
- hydrogen plasma doping polycrystalline silicon to form doped polycrystalline silicon;
- annealing the doped polycrystalline silicon, wherein the hydrogen plasma doping and the annealing are decoupled;
- depositing a metal;
- and
- removing the metal after annealing the doped polycrystalline silicon.
2 more elements
A method for forming a memory cell string, comprising:
- forming a stack comprising alternating layers of poly-silicon material and dielectric material;
- forming an opening in the stack;
- recessing the poly-silicon material from the opening;
- depositing a blocking dielectric in recesses formed by recessing the poly-silicon material from the opening;
- forming charge storage structures in the recesses;
- forming a tunnel dielectric in the recesses along the opening;
- forming polycrystalline silicon in the opening over the tunnel dielectric to form a pillar of a channel for a NAND string;
- hydrogen plasma doping the polycrystalline silicon to form doped polycrystalline silicon;
- separately annealing the doped polycrystalline silicon, wherein the hydrogen plasma doping and the annealing are decoupled;
- in-situ depositing a deposition material;
- and
- removing the deposition material after annealing the doped polycrystalline silicon.
9 more elements
A method for forming a memory cell string, comprising;
- forming a stack comprising alternating layers of poly-silicon material and dielectric material;
- forming an opening in the stack;
- recessing the poly-silicon material from the opening;
- depositing a blocking dielectric in recesses formed by recessing the poly-silicon material from the opening;
- forming charge storage structures in the recesses;
- forming a tunnel dielectric in the recesses along the opening;
- forming polycrystalline silicon in the opening over the tunnel dielectric to form a pillar of a channel for a NAND string;
- hydrogen plasma doping the polycrystalline silicon to form doped polycrystalline silicon;
- separately annealing the doped polycrystalline silicon, wherein the hydrogen plasma doping and the annealing are decoupled;
- depositing a metal;
- and
- removing the metal after annealing the doped polycrystalline silicon.
9 more elements
A memory formed according to a method, comprising:
- hydrogen plasma doping, for a three-dimensional NAND array, polycrystalline silicon to form doped polycrystalline silicon;
- and
- annealing the three-dimensional NAND array having the doped polycrystalline silicon, wherein the hydrogen plasma doping and the annealing are decoupled;
- and
- performing in-situ deposition after hydrogen plasma doping the polycrystalline silicon, and removing the deposition layer after annealing the three-dimensional NAND array having the doped polycrystalline silicon.
2 more elements
A memory formed according a method, comprising:
- hydrogen plasma doping, for a three-dimensional NAND array, polycrystalline silicon to form doped polycrystalline silicon;
- and
- annealing the three-dimensional NAND array having the doped polycrystalline silicon, wherein the hydrogen plasma doping and the annealing are decoupled;
- and
- performing metal deposition to deposit a metal layer after hydrogen plasma doping the polycrystalline silicon, and removing the deposited metal layer after annealing the three-dimensional NAND array having the doped polycrystalline silicon.
2 more elements
Dependencies are inferred from the claim text.