Packaged microelectronic devices and methods for manufacturing packaged microelectronic devices

A method of processing a semiconductor substrate having a plurality of microelectronic dies, the individual dies including integrated circuitry and terminals electrically coupled to the integrated circuitry, the method comprising:

• constructing a plurality of electrically conductive through-substrate interconnects extending at least partially through the semiconductor substrate and in contact with corresponding terminals;
• disposing a connection structure on a back side of the semiconductor substrate, wherein the connection structure is a single, unitary structure covering at least approximately the entire back side of the semiconductor substrate and having a plurality of preformed apertures at least partially aligned with back side portions of the through-substrate interconnects;
• and
• depositing conductive material into the apertures and forming a plurality of conductive couplers in contact with back side portions of the through-substrate interconnects.

A method of processing a semiconductor substrate having a plurality of microelectronic dies, the individual dies including integrated circuitry and terminals electrically coupled to the integrated circuitry, the method comprising:

• constructing a plurality of electrically conductive through-substrate interconnects extending at least partially through the semiconductor substrate and in contact with corresponding terminals;
• disposing a connection structure on a back side of the semiconductor substrate, the connection structure including a single, unitary structure covering at least approximately the entire back side of the semiconductor substrate and having a plurality of preformed apertures at least partially aligned with back side portions of the through-substrate interconnects;
• depositing conductive material into the apertures and forming a plurality of conductive couplers in contact with back side portions of the through-substrate interconnects;
• and
• singulating the semiconductor substrate after depositing the conductive material into the apertures.

A method for manufacturing stacked microelectronic devices, the method comprising:

• placing an attachment structure on a back side of a first microelectronic die, wherein the attachment structure is a dielectric adhesive film including a plurality of preformed openings at least partially aligned with back side portions of electrically conductive through-substrate interconnects in the first die, and wherein the attachment structure further includes a plurality of conductive couplers formed in at least a portion of the openings and electrically coupled to corresponding through-substrate interconnects;
• contacting the attachment structure with a front side of a second microelectronic die;
• and
• joining the back side of the first die and the front side of the second die, wherein the first die is physically and electrically connected with the second die via the attachment structure.

A method of processing a semiconductor substrate having a plurality of microelectronic dies, the individual dies including integrated circuitry and terminals electrically coupled to the integrated circuitry, the method comprising:

• constructing a plurality of electrically conductive through-substrate interconnects extending at least partially through the semiconductor substrate and in contact with corresponding terminals;
• disposing a connection structure on a back side of the semiconductor substrate, the connection structure comprising a film-over-wire die attach film having a plurality of preformed apertures at least partially aligned with back side portions of the through-substrate interconnects, and wherein the die attach film has a size and shape at least approximately identical to a size and shape of the semiconductor substrate;
• and
• depositing conductive material into the apertures and forming a plurality of conductive couplers in contact with back side portions of the through-substrate interconnects.