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US 8,940,576 B1Granted
Methods for n-type doping of graphene, and n-type-doped graphene compositions
AssigneeHRL Laboratories, LLC
InventorsSteven S. Bui, Jeong-Sun Moon
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AssigneeHRL Laboratories, LLC
InventorsSteven S. Bui, Jeong-Sun Moon
Estimating the term…
The present invention provides practical methods for n-type doping of graphene, either during graphene synthesis or following the formation of graphene. Some variations provide a method of n-type doping of graphene, comprising introducing a phosphorus-containing dopant fluid to a surface of graphene, under effective conditions to dope the graphene with phosphorus atoms or with phosphorus-containing molecules or fragments. It has been found that substitutional doping with phosphine can effectively modulate the electrical properties of graphene, such as graphene supported on Si or SiC substrates. Graphene sheet resistances well below 200 ohm/sq, and sheet carrier concentrations above 5×1013 cm−2, have been observed experimentally for n-doped graphene produced by the disclosed methods. This invention provides n-doped graphene for various electronic-device applications.
A method of n-type doping of graphene, said method comprising introducing a phosphorus-containing and hydrogen-containing dopant fluid to a surface of graphene, under effective conditions in a vacuum chamber at a pressure greater than 10 torr and less than 50 torr, to dope said graphene with phosphine fragments each consisting of phosphorus in molecular combination with hydrogen, wherein said phosphorus-containing and hydrogen-containing dopant fluid is selected from the group consisting of phosphine, starting phosphine fragments, phosphine derivatives, and combinations thereof, and wherein said doping is substitutional doping of said phosphine fragments into said graphene.
A method of forming n-doped graphene, said method comprising growing epitaxial graphene by carbon deposition on a substrate layer while simultaneously introducing a phosphorus-containing and hydrogen-containing dopant fluid in a vacuum chamber at a pressure greater than 10 torr and less than 50 torr, to dope said graphene, during graphene growth, with phosphine fragments each consisting of phosphorus in molecular combination with hydrogen, wherein said phosphorus-containing and hydrogen-containing dopant fluid is selected from the group consisting of phosphine, starting phosphine fragments, phosphine derivatives, and combinations thereof, wherein said doping is substitutional doping of said phosphine fragments into said graphene, and wherein said substrate layer is selected from the group consisting of Si (111), Si (100), SiC, and combinations thereof.
An n-doped graphene composition comprising graphene and phosphine fragments that are substitutionally doped within said graphene, wherein said phosphine fragments each consist of phosphorus in molecular combination with hydrogen, and wherein said phosphine fragments do not include PH3.
An n-doped graphene composition substitutionally n-type-doped with fragments of a phosphine derivative, PR1R2R3, wherein each of R1, R2, and R3 are independently selected from hydrogen, a hydroxyl group, or hydrocarbon groups capable of bonding with phosphorus, wherein at least one of R1, R2, and R3 is not hydrogen, wherein said fragments of a phosphine derivative each consist of, in molecular combination, phosphorus and at least one of R1, R2, and R3, and wherein said fragments do not include PR1R2R3 itself.
A supported graphene composition comprising an n-doped graphene composition comprising graphene and phosphine fragments that are substitutionally doped within said graphene, wherein said phosphine fragments each consist of phosphorus in molecular combination with hydrogen, and wherein said phosphine fragments do not include PH3;
Dependencies are inferred from the claim text.