Method of producing semiconductor device, solid-state imaging device, method of producing electric apparatus, and electric apparatus
AssigneeSony Corporation
InventorYasufumi Miyoshi
Life of this patent
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Abstract
There is provided a method of producing a semiconductor device. The method includes the steps of: forming a first hard mask having an opening above a substrate; forming a sacrificial film above a side surface of the opening of the first hard mask; forming a second hard mask in the opening having the sacrificial film above the side surface; removing the sacrificial film after the second hard mask is formed; ion implanting a first conductivity-type impurity through the first hard mask; and ion implanting a second conductivity-type impurity through the first and second hard masks.
Claims20
A method of producing a semiconductor device, the method comprising:
- a step of forming a first opening through a first electrically-insulative layer, said first electrically-insulative layer being on a semiconductor substrate during the step of forming the first opening;
- a step of depositing a second electrically-insulative layer in said first opening, said second electrically-insulative layer being on said semiconductor substrate after the step of depositing the second electrically-insulative layer;
- a step of implanting first ions through a second opening and into a compensation region of the semiconductor substrate, said second opening being a space between said first electrically-insulative layer and said second electrically-insulative layer;
- and
- a step of removing said second electrically-insulative layer, said first electrically-insulative layer remaining on said semiconductor substrate after the step of removing the second electrically-insulative layer.
A method of producing a semiconductor device, the method comprising:
- a step of forming a first opening through a first electrically-insulative layer, said first electrically-insulative layer being on a semiconductor substrate during the step of forming the first opening;
- a step of depositing a second electrically-insulative layer in said first opening, said second electrically-insulative layer being on said semiconductor substrate after the step of depositing the second electrically-insulative layer;
- a step of implanting first ions through a second opening and into a compensation region of the semiconductor substrate, said second opening being a space between said first electrically-insulative layer and said second electrically-insulative layer;
- a step of depositing a sacrificial film on a sidewall of the first opening prior to the step of depositing the second electrically-insulative layer, said second electrically-insulative layer touching said sacrificial film after the step of depositing the second electrically-insulative layer;
- and
- a step of removing said sacrificial film to form said second opening, said sacrificial film being removed prior to the step of implanting the first ions.
Dependencies are inferred from the claim text.