Thermoelectric conversion element
AssigneeFujitsu Limited
InventorsKazuaki Kurihara, Masaharu Hida, Kazunori Yamanaka
Life of this patent
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Abstract
P-type semiconductor sheets and n-type semiconductor sheets formed by mixing a powder of semiconductor material, a binder resin, a plasticizer, and a surfactant are prepared. In addition, separator sheets formed by mixing a resin such as PMMA and a plasticizer are prepared. Through holes are formed in each of the separator sheets and then filled with a conductive material. Thereafter, the p-type semiconductor sheet, the separator sheet, the n-type semiconductor sheet and the separator sheet are stacked. The resultant laminated body is cut into a predetermined size and then subjected to a baking process.
Claims3
A thermoelectric conversion element comprising:
- p-type semiconductor blocks and n-type semiconductor blocks alternately arranged in a first direction;
- a plurality of electrodes connecting the p-type semiconductor blocks and the n-type semiconductor blocks to each other;
- and
- a pair of heat transfer plates arranged to hold the p-type semiconductor blocks and the n- type semiconductor blocks therebetween in a second direction orthogonal to the first direction, wherein
- each of the plurality of electrodes is arranged between upper or lower portions of wall surfaces of the p-type semiconductor blocks and the n-type semiconductor blocks adjacent to each other, the wall surface of the p-type semiconductor block and the wall surface of the n-type semiconductor block facing each other, and the electrode being arranged only between the wall surface of the p-type semiconductor block and the wall surface of the n-type semiconductor block,
- an air gap is formed between the wall surface of the p-type semiconductor block and the wall surface of the n-type semiconductor block,
- the plurality of electrodes are arranged to allow a current to flow through the p-type semiconductor blocks and the n-type semiconductor blocks in the second direction, and
- a longitudinal direction of the p-type semiconductor blocks and the n-type semiconductor blocks coincides with a longitudinal direction of the electrodes, and an arrangement direction of the p-type semiconductor blocks and the n-type semiconductor blocks is orthogonal to the longitudinal direction of the electrodes.
Dependencies are inferred from the claim text.