Double patterning with inline critical dimension slimming

A method for double patterning a substrate, comprising:

• forming a first layer of radiation-sensitive material;
• preparing a first pattern in said first layer of radiation-sensitive material using a first lithographic process, said first pattern being characterized by a first critical dimension (CD);
• following said preparing said first pattern, performing a first CD slimming process to reduce said first CD to a first reduced CD;
• freezing said first pattern with said first reduced CD in said first layer of radiation-sensitive material using a freeze process;
• forming a second layer of radiation-sensitive material on said first pattern with said first reduced CD in said first layer of radiation-sensitive material;
• preparing a second pattern in said second layer of radiation-sensitive material using a second lithographic process, said second pattern being characterized by a second CD;
• and
• following said preparing said second pattern, performing a second CD slimming process to reduce said second CD to a second reduced CD.