Photomask blank, photomask, method of manufacturing the same, and method of manufacturing a semiconductor device

A photomask blank for use in manufacturing a photomask adapted to be applied with exposure light having a wavelength of 200 nm or less,

• wherein the photomask blank comprises
• a transparent substrate,
• a light-shielding film formed on the transparent substrate and containing molybdenum and silicon,
• an etching mask film formed in contact with the light-shielding film, and
• a resist film formed on the etching mask film, and
• wherein the light-shielding film comprises a light-shielding layer and an antireflection layer in this order from the transparent substrate,
• the etching mask film is made of a single layer formed of a material composed mainly of CrOCN and has a chromium content of 35 at % or less, total content of oxygen and nitrogen of 40 at % or more, and carbon content of 5 at % to 20 at %, the etching mask film being a film which is removed when a photomask is manufactured,
• a laminated film comprising the light-shielding film and the etching mask film has a sheet resistance value of 3.0 kΩ/square or less,
• the resist film having a thickness of 90 nm or less,
• the etching mask film having a thickness of 5 nm to 15 nm, and
• the light-shielding film having a thickness of 52 nm or less.