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AssigneeAdeka Corporation
InventorsKenji Hara, Atsushi Kobayashi, Hiroo Yokota, Hiroshi Morita, Seiichi Saito
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The present invention provides a coating liquid for forming an insulation film, which has a small shrinkage in the calcination step in water vapor and is not likely to cause cracking of a resulting silica coating film or detachment thereof from a semiconductor substrate; an insulation film using the same; and a method of producing a compound used in the same. The coating liquid of comprises an inorganic polysilazane whose ratio of a peak area at 4.5 to 5.3 ppm attributed to SiH1 group and SiH2 group with respect to a peak area at 4.3 to 4.5 ppm attributed to SiH3 group in 1H-NMR spectrum is 4.2 to 50; and an organic solvent. The insulation film is obtained using the coating liquid.
A coating liquid for forming an insulation film, which comprises an inorganic polysilazane whose ratio of a peak area at 4.5 to 5.3 ppm attributed to SiH1 group and SiH2 group with respect to a peak area at 4.3 to 4.5 ppm attributed to SiH3 group in 1H-NMR spectrum is 4.2 to 50;
A method of producing an inorganic polysilazane, wherein an adduct is formed by reacting a dihalosilane compound, a trihalosilane compound or a mixture thereof with a base and the resulting adduct is then reacted with ammonia,
Dependencies are inferred from the claim text.