Method of producing a microacoustic component
AssigneeEpcos AG
InventorsChristoph Eggs, Gudrun Henn, Werner Ruile, Guenter Scheinbacher, Siegfried Menzel, Mario Spindler
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Abstract
The microacoustic component has a substrate that has at least one layer (composed of a dielectric or piezoelectric material, and a metallic strip structure. The layer is composed of a dielectric or piezoelectric material and/or the metallic strip structure have/has been produced or can be produced by the atomic layer deposition method.
Claims18
A method for producing a microacoustic component, the method comprising:
- directly depositing a layer over a partially formed microacoustic component, the layer being deposited using an atomic layer deposition method as a series of self-passivating monolayers of uniform thickness, a number of self-passivating monolayers being chosen to obtain a thickness of the deposited layer that is chosen to effect a desired frequency accuracy of the microacoustic component, wherein at least one of the self-passivating monolayers comprises a piezoelectric material;
- and
- completing the microacoustic component;
- wherein the directly depositing the layer achieves the desired frequency accuracy such that producing the microacoustic component includes no trimming steps.
A method of forming a micro-acoustic component, the method comprising:
- directly forming a bottom electrode over a substrate using a first atomic layer deposition (ALD) process;
- and
- directly depositing a piezoelectric layer of a thin-film bulk acoustic resonator over the substrate using a second ALD process,
- wherein the first and the second ALD processes control a thickness and uniformity of the bottom electrode and the piezoelectric layer so as to achieve a selected frequency and a desired frequency accuracy such that the method of forming the micro-acoustic component includes no trimming steps, and
- wherein the bottom electrode and the piezoelectric layer comprise two different frequency determining layers of the micro-acoustic component.
A method of forming a micro-acoustic component, the method comprising:
- directly forming a metallic electrode over a substrate using a first atomic layer deposition (ALD) process;
- and
- directly depositing a second layer over the substrate using a second ALD process,
- wherein the second layer comprises a dielectric covering layer of SiO2 of a guided bulk acoustic wave or surface acoustic wave device,
- wherein the first and the second ALD processes control a thickness and uniformity of the metallic electrode and the dielectric covering layer so as to achieve a selected frequency,
- wherein the metallic electrode and the dielectric covering layer comprise two different frequency determining layers of the micro-acoustic component;
- wherein the directly forming the metallic electrode and the directly depositing the second layer achieves a desired frequency accuracy such that the method of forming the micro-acoustic component includes no trimming steps.
A method of forming a micro-acoustic component, the method comprising:
- directly forming a piezoelectric layer over a substrate using a first atomic layer deposition (ALD) process;
- and
- directly depositing a top electrode of a thin-film bulk acoustic resonator over the substrate using a second ALD process,
- wherein the first and the second ALD processes control a thickness and uniformity of the piezoelectric layer and the top electrode so as to achieve a selected frequency and a desired frequency accuracy such that the method of forming the micro-acoustic component includes no trimming steps, and
- wherein the piezoelectric layer and the top electrode comprise two different frequency determining layers of the micro-acoustic component.
Dependencies are inferred from the claim text.