Large diamond crystal substrates and methods for producing the same
AssigneeNational Institute of Advanced Industrial Science and Technology
InventorsHideaki Yamada, Akiyoshi Chayahara, Yoshiaki Mokuno, Shinichi Shikata
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Abstract
The present invention provides a method for producing a large substrate of single-crystal diamond, including the steps of preparing a plurality of single-crystal diamond layers separated form an identical parent substrate, placing the single-crystal diamond layers in a mosaic pattern on a flat support, and growing a single-crystal diamond by a vapor-phase synthesis method on faces of the single-crystal diamond layers where they have been separated from the parent substrate. According to the method of the invention, a mosaic single-crystal diamond having a large area and good quality can be produced relatively easily.
Claims12
A method for producing a single-crystal diamond substrate having a large area, comprising the steps of:
- (1) implanting ions into a parent substrate of single-crystal diamond to form a graphitized, non-diamond layer near a surface of the parent substrate, and subsequently etching the non-diamond layer to separate therefrom a single-crystal diamond layer above the non-diamond layer;
- (2) repeatedly subjecting the parent substrate used in Step (1) to the operation of Step (1), to separate from the parent substrate one or more single-crystal diamond layers having a substantially identical thickness to that of the single-crystal diamond layer separated in Step (1), wherein all of the single-crystal diamond layer obtained in Step (1) and the single-crystal diamond layers obtained in Step (2) are child substrates, wherein the separated faces of all of the child substrates have an off-set angle, crystal plane direction, strain distribution and defect distribution identical to those of the parent substrate, wherein each of the separated faces has been formed in Step (1) when separating each of the child substrates from the parent substrate;
- (3) placing the plurality of the child substrates on a flat support such that side faces of adjacent child substrates are in contact with each other, directions of crystal faces of all of the child substrates are identical, and the separated faces of the child substrates are exposed as top faces;
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- (4) growing a single-crystal diamond by a vapor-phase synthesis method on the separated faces of the plurality of child substrates placed on the support in Step (3), thereby bonding the plurality of child substrates.
A method for producing a single-crystal diamond substrate having a large area, comprising the steps of:
- (1) implanting ions into a parent substrate of single-crystal diamond to form a graphitized, non-diamond layer near a surface of the parent substrate, and subsequently etching the non-diamond layer to separate therefrom a single-crystal diamond layer above the non-diamond layer;
- (2) repeatedly subjecting the parent substrate used in Step (1) to the operation of Step (1), to further separate from the parent substrate one or more single-crystal diamond layers, wherein all of the single-crystal diamond layer obtained in Step (1) and the single-crystal diamond layers obtained in Step (2) are child substrates, wherein the separated faces of all of the child substrates have an off-set angle, crystal plane direction, strain distribution and defect distribution identical to those of the parent substrate, wherein each of the separated faces has been formed in Step (1) when separating each of the child substrates from the parent substrate;
- (3) placing the plurality of the child substrates on a flat support such that side faces of adjacent child substrates are in contact with each other, directions of crystal faces of all of the child substrates are identical, and the separated faces of the child substrates are in contact with a surface of the support;
- (4) growing a single-crystal diamond by a vapor-phase synthesis method on the plurality of the child substrates placed on the support in Step (3), thereby bonding the plurality of the child substrates;
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- (5) inverting the child substrates bonded in Step (4) on the support, and subsequently growing a single-crystal diamond on the child substrates by a vapor-phase synthesis method, thereby growing a single-crystal diamond on the separated faces of the child substrates.
Dependencies are inferred from the claim text.