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US 8,940,264 B2Granted
Process for producing polycrystalline silicon
AssigneeWacker Chemie AG
InventorsWalter Haeckl, Karl Hesse, Wilhelm Hoebold, Reinhard Wolf
Life of this patent
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Abstract
The invention provides a process for producing polycrystalline silicon, by introducing reaction gases containing a silicon-containing component and hydrogen into reactors to deposit silicon, wherein a purified condensate from a first deposition process in a first reactor is supplied to a second reactor, and is used in a second deposition process in that second reactor.
Claims7
A process for producing polycrystalline silicon, by introducing reaction gases comprising a silicon-containing component and hydrogen into reactors to deposit silicon, wherein:
- a) a purified condensate from a first deposition process in a first reactor is supplied to a second reactor, and is used in a second deposition process in the second reactor and
- b) the first and second reactors each include a separate hydrogen circuit and hydrogen not consumed in the deposition processes in each reactor is purified and recycled into its corresponding hydrogen circuit.
Dependencies are inferred from the claim text.