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US 8,940,095 B2Granted
Apparatus for growth of single crystals including a solute feeder
AssigneeRensselaer Polytechnic Institute
InventorPartha Dutta
Life of this patent
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Abstract
An apparatus for growth of uniform multi-component single crystals is provided. The single crystal material has at least three elements and has a diameter of at least 50 mm, a dislocation density of less than 100 cm−2 and a radial compositional variation of less than 1%.
Claims13
A single crystal growth apparatus, comprising:
- a vessel;
- a crystal growth seed mounting area in the vessel;
- a crystal growth area in the vessel adjacent to the crystal growth seed mounting area;
- a synthesizing melt area in the vessel;
- a thermal barrier separating the crystal growth area from the synthesizing melt area, the thermal barrier containing at least one opening connecting the crystal growth area to the synthesizing melt area;
- a growth melt;
- a synthesizing melt;
- a solute source, wherein the solute source has a chemical composition substantially different than the synthesizing melt;
- a solute feeder adapted to provide a solute into the synthesizing melt area during crystal growth;
- a heating element adapted to heat the vessel to form the growth melt in the crystal growth area and to form the synthesizing melt in the synthesizing melt area,
- wherein the vessel is oriented vertically, such that the crystal growth seed area is located on a bottom of the vessel, the synthesizing melt area is at a top of the vessel and the crystal growth area is located between the seed and the synthesizing melt area, and wherein:
- the vessel comprises a first crucible containing the crystal growth seed area and the growth melt area and a second crucible containing the synthesizing melt area;
- the thermal barrier comprises a bottom wall of a second crucible containing the at least one opening;
- and
- the second crucible is located at least partially in the first crucible.
12 more elements
Dependencies are inferred from the claim text.