Methods for fabricating a semiconductor wafer processing device
AssigneeSunEdison Semiconductor Limited
InventorsJohn Allen Pitney, Manabu Hamano
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Abstract
A method of fabricating a semiconductor processing device includes providing a susceptor including a substantially cylindrical body portion having opposing upper and lower surfaces. The body portion has a diameter larger than a wafer diameter. The method also includes providing a set of holes circumferentially disposed at a first susceptor diameter, the set of holes being evenly spaced with respect to adjacent holes and extending through the upper and lower surfaces in an area. The first susceptor diameter is larger than the wafer diameter, and holes are omitted along the first diameter in a set of predetermined orientations.
Claims10
A method of treating a wafer in an epitaxial chemical vapor deposition process, the method comprising:
- providing a susceptor having a plurality of holes circumferentially disposed at a first susceptor diameter, wherein the first susceptor diameter is larger than a diameter of a wafer to be treated;
- placing the untreated wafer on the susceptor in a predetermined orientation such that <110> directions of the wafer aligns with portions of the susceptor that are free of holes outward from the diameter of the untreated wafer;
- and
- chemically treating the wafer.
Dependencies are inferred from the claim text.