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US 8,939,347 B2Granted
Magnetic intermetallic compound interconnect
AssigneeIntel Corporation
InventorsRajasekaran Swaminathan, Ravindranath V. Mahajan
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Abstract
The present disclosure relates to the field of fabricating microelectronic packages, wherein magnetic particles distributed within a solder paste may be used to form a magnetic intermetallic compound interconnect. The intermetallic compound interconnect may be exposed to a magnetic field, which can heat a solder material to a reflow temperature for attachment of microelectronic components comprising the microelectronic packages.
Claims14
A method of fabricating a magnetic intermetallic compound interconnect, comprising:
- providing a first metallic attachment structure on a substrate;
- forming a dielectric layer over the substrate and the first metallic attachment structure, wherein the dielectric layer has an opening therethrough to expose a portion of the first metallic attachment structure;
- depositing a magnetic composite material adjacent the first metallic attachment structure within the dielectric layer opening;
- forming a mask on the dielectric layer after depositing the magnetic composite material, wherein the mask has an opening at the dielectric layer opening;
- depositing a solder material adjacent the magnetic composite material within the dielectric layer opening and the mask opening;
- removing the mask to expose a portion of the solder material outside the dielectric layer opening;
- and
- heating the solder material to a reflow temperature with a magnetic field imparted on the magnetic composite material.
5 more elements
A method of fabricating a microelectronic package, comprising:
- providing a first metallic attachment structure on a substrate;
- forming a dielectric layer over the substrate and the first metallic attachment structure, wherein the dielectric layer has an opening therethrough to expose a portion of the first metallic attachment structure;
- depositing a magnetic composite material adjacent the first metallic attachment structure within the dielectric layer opening;
- forming a mask on the dielectric layer after depositing the magnetic composite material, wherein the mask has an opening at the dielectric layer opening;
- depositing a solder material adjacent the magnetic composite material within the dielectric layer opening and the mask opening;
- removing the mask to expose a portion of the solder material outside the dielectric layer opening;
- reflowing the solder material with a magnetic field imparted on the magnetic composite material;
- and
- contacting the solder material with a second metallic attachment structure.
6 more elements
Dependencies are inferred from the claim text.