Semiconductor memory having volatile and multi-bit, non-volatile functionality and methods of operating
AssigneeZeno Semiconductor, Inc.
InventorYuniarto Widjaja
Life of this patent
Estimating the term…
Loading patent…
AssigneeZeno Semiconductor, Inc.
InventorYuniarto Widjaja
Estimating the term…
A semiconductor memory cell, semiconductor memory devices comprising a plurality of the semiconductor memory cells, and methods of using the semiconductor memory cell and devices are described. A semiconductor memory cell includes a substrate having a first conductivity type; a first region embedded in the substrate at a first location of the substrate and having a second conductivity type; a second region embedded in the substrate at a second location of the substrate and have the second conductivity type, such that at least a portion of the substrate having the first conductivity type is located between the first and second locations and functions as a floating body to store data in volatile memory; a trapping layer positioned in between the first and second locations and above a surface of the substrate; the trapping layer comprising first and second storage locations being configured to store data as nonvolatile memory independently of one another, and a control gate positioned above the trapping layer.
A semiconductor memory cell comprising:
A semiconductor memory cell comprising:
A memory array comprising a plurality of rows and columns of semiconductor memory cells, a plurality of said cells each comprising:
Dependencies are inferred from the claim text.