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US 8,918,746 B1Granted
Cut mask aware contact enclosure rule for grating and cut patterning solution
AssigneeGlobalfoundries Inc.
InventorsLei Yuan, Jongwook Kye, Harry J. Levinson
Life of this patent
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Abstract
Methodologies and an apparatus enabling a selection of design rules to improve a density of features of an IC design are disclosed. Embodiments include: determining a feature overlapping a grating pattern of an IC design, the grating pattern including a plurality of grating structures; determining a shape of a cut pattern overlapping the grating pattern; and selecting one of a plurality of rules for the feature based on the determined shape.
Claims20
A method comprising:
- determining a feature overlapping a grating pattern of an integrated circuit (IC) design, the grating pattern including a plurality of grating structures;
- determining a shape of a cut pattern overlapping the grating pattern;
- and
- selecting, via at least one processor, one of a plurality of rules for the feature based on the determined shape.
1 more element
An apparatus comprising:
- a processor;
- and
- a memory including computer program code for a program,
- the memory and the computer program code configured to, with the processor, cause the apparatus to perform the following;
- determine a feature overlapping a grating pattern of an integrated circuit (IC) design, the grating pattern including a plurality of grating structures;
- determine a shape of a cut pattern overlapping the grating pattern;
- and
- select one of a plurality of rules for the feature based on the determined shape.
5 more elements
A method comprising:
- determining a vertical interconnect access (VIA) overlapping a grating structure of a plurality of grating structures extending in one direction of an integrated circuit (IC) design;
- determining a shape of a cut pattern overlapping the grating structure;
- designating a cut of the grating structure indicated by the cut pattern as an inner or outer vortex based on the determined shape, the designation of inner vortex indicating a process variation extending the cut pattern outside a region indicated by the cut pattern and the designation of outer vortex indicating a process variation extending the cut pattern inside a region indicated by the cut pattern;
- and
- selecting, via at least one processor, a conservative or tight enclosure rule based on the designation of the cut, the conservative and tight enclosure rules defining first and second minimum distances, respectively, between the VIA and a line end of a contact structure for the VIA, wherein the first minimum distance is larger than the second minimum distance.
2 more elements
Dependencies are inferred from the claim text.