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US 8,916,961 B2Granted
Insulation sheet made from silicon nitride, and semiconductor module structure using the same
AssigneesKabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd.
InventorTakayuki Naba
Life of this patent
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Abstract
An insulation sheet made from silicon nitride comprising: a sheet-shaped silicon-nitride substrate which contains β-silicon-nitride crystal grains as a main phase; and a surface layer which is formed on one face or both front and back faces of surfaces of the silicon-nitride substrate and is formed from a resin or a metal which includes at least one element selected from among In, Sn, Al, Ag, Au, Cu, Ni, Pb, Pd, Sr, Ce, Fe, Nb, Ta, V and Ti. A semiconductor module structure using the insulation sheet made from silicon nitride.
Claims16
An insulation sheet, comprising:
- a sheet-shaped silicon-nitride substrate comprising β-silicon-nitride crystal grains as a main phase;
- and
- a surface layer formed on one face or both front and back faces of the silicon-nitride substrate from a resin;
- wherein the surface layer has a Vickers hardness of 200 or less and a thickness of 100 gm or less, and
- wherein the insulation sheet is suitable for a pressure contact structure in which the insulation sheet is pressed to another member through the surface layer.
2 more elements
Dependencies are inferred from the claim text.