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US 8,916,869 B2Granted
Semiconductor device including an oxide semiconductor layer
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsJun Koyama, Shunpei Yamazaki
Life of this patent
Estimating the term…
Abstract
A solid-state image sensor which holds a potential for a long time and includes a thin film transistor with stable electrical characteristics is provided. When the off-state current of a thin film transistor including an oxide semiconductor layer is set to 1×10−13 A or less and the thin film transistor is used as a reset transistor and a transfer transistor of the solid-state image sensor, the potential of the signal charge storage portion is kept constant, so that a dynamic range can be improved. When a silicon semiconductor which can be used for a complementary metal oxide semiconductor is used for a peripheral circuit, a high-speed semiconductor device with low power consumption can be manufactured.
Claims43
A semiconductor device comprising:
- a first transistor comprising a gate electrode over a substrate, wherein a channel formation region of the first transistor comprises crystalline silicon;
- an interlayer insulating film over the first transistor;
- a second transistor over the interlayer insulating film, the second transistor comprising:
- a first oxide semiconductor layer;
- a source electrode and a drain electrode over the first oxide semiconductor layer;
- a gate insulating layer over the first oxide semiconductor layer;
- and
- a gate electrode over the gate insulating layer;
- and
- a third transistor over the interlayer insulating film, the third transistor comprising:
- a second oxide semiconductor layer,
- wherein the gate electrode of the first transistor is electrically connected to one of the source electrode and the drain electrode of the second transistor, and
- wherein the first oxide semiconductor layer comprises a region overlapping with both of the gate electrode of the second transistor and one of the source electrode and the drain electrode of the second transistor.
10 more elements
A semiconductor device comprising:
- a first transistor comprising a gate electrode, wherein a channel formation region of the first transistor comprises crystalline silicon;
- an interlayer insulating film over the first transistor;
- a second transistor over the interlayer insulating film, the second transistor comprising:
- a first oxide semiconductor layer;
- a source electrode and a drain electrode over the first oxide semiconductor layer;
- a gate insulating layer over the first oxide semiconductor layer;
- and
- a gate electrode over the gate insulating layer;
- and
- a third transistor over the interlayer insulating film, the third transistor comprising:
- a second oxide semiconductor layer,
- wherein the gate electrode of the first transistor is electrically connected to one of the source electrode and the drain electrode of the second transistor, and
- wherein the first oxide semiconductor layer comprises a region overlapping with both of the gate electrode of the second transistor and one of the source electrode and the drain electrode of the second transistor.
10 more elements
A semiconductor device comprising:
- a first transistor comprising a gate electrode, wherein a channel formation region of the first transistor comprises crystalline silicon;
- an interlayer insulating film over the first transistor;
- a second transistor over the interlayer insulating film, the second transistor comprising:
- a first oxide semiconductor layer;
- a source electrode and a drain electrode over the first oxide semiconductor layer;
- a gate insulating layer over the first oxide semiconductor layer;
- and
- a gate electrode over the gate insulating layer;
- and
- a third transistor over the interlayer insulating film, the third transistor comprising:
- a second oxide semiconductor layer,
- wherein the gate electrode of the first transistor is electrically connected to one of the source electrode and the drain electrode of the second transistor,
- wherein the first oxide semiconductor layer comprises a region overlapping with both of the gate electrode of the second transistor and one of the source electrode and the drain electrode of the second transistor, and
- wherein the gate insulating layer includes a depression portion between the source electrode and the drain electrode of the second transistor.
11 more elements
A semiconductor device comprising:
- a first transistor comprising a gate electrode over a substrate, wherein a channel formation region of the first transistor comprises crystalline silicon;
- an interlayer insulating film over the first transistor;
- a second transistor over the interlayer insulating film, the second transistor comprising:
- a first oxide semiconductor layer;
- a source electrode and a drain electrode over the first oxide semiconductor layer;
- a gate insulating layer over the first oxide semiconductor layer;
- and
- a gate electrode over the gate insulating layer;
- and
- a third transistor over the interlayer insulating film, the third transistor comprising:
- a second oxide semiconductor layer,
- wherein the gate electrode of the first transistor is electrically connected to one of the source electrode and the drain electrode of the second transistor,
- wherein the first oxide semiconductor layer comprises a region overlapping with both of the gate electrode of the second transistor and one of the source electrode and the drain electrode of the second transistor, and
- wherein a concentration of hydrogen in the first oxide semiconductor layer is 5×1019/cm3 or lower.
11 more elements
A semiconductor device comprising:
- a photoelectric conversion element comprising crystalline silicon,
- a first transistor comprising a gate electrode over a substrate, wherein a channel formation region of the first transistor comprises crystalline silicon;
- an interlayer insulating film over the photoelectric conversion element;
- a second transistor comprising a first oxide semiconductor layer, wherein the first oxide semiconductor layer is provided over the interlayer insulating film;
- and
- a third transistor comprising a second oxide semiconductor layer, wherein the second oxide semiconductor layer is provided over the interlayer insulating film.
3 more elements
A semiconductor device comprising:
- a photoelectric conversion element;
- a first transistor;
- a second transistor;
- an interlayer insulating film over the photoelectric conversion element;
- and
- a third transistor over the interlayer insulating film,
- wherein a gate electrode of the first transistor is electrically connected to one of a source electrode and a drain electrode of the second transistor,
- wherein the gate electrode of the first transistor is electrically connected to one of a source electrode and a drain electrode of the third transistor,
- wherein one of a source electrode and a drain electrode of the first transistor is electrically connected to a first line,
- wherein a gate electrode of the second transistor is electrically connected to a second line,
- wherein the other of the source electrode and the drain electrode of the second transistor is electrically connected to the photoelectric conversion element,
- wherein a gate electrode of the third transistor is electrically connected to a third line,
- wherein the second transistor comprises a first oxide semiconductor layer, and
- wherein the third transistor comprises a second oxide semiconductor layer.
11 more elements
A semiconductor device comprising:
- a photoelectric conversion element comprising crystalline silicon;
- a first transistor;
- a second transistor;
- an interlayer insulating film over the photoelectric conversion element;
- and
- a third transistor over the interlayer insulating film,
- wherein a gate electrode of the first transistor is electrically connected to one of a source electrode and a drain electrode of the second transistor,
- wherein the gate electrode of the first transistor is electrically connected to one of a source electrode and a drain electrode of the third transistor,
- wherein one of a source electrode and a drain electrode of the first transistor is electrically connected to a first line,
- wherein a gate electrode of the second transistor is electrically connected to a second line,
- wherein the other of the source electrode and the drain electrode of the second transistor is electrically connected to the photoelectric conversion element,
- wherein a gate electrode of the third transistor is electrically connected to a third line,
- wherein the second transistor comprises a first oxide semiconductor layer, and
- wherein the third transistor comprises a second oxide semiconductor layer.
11 more elements
Dependencies are inferred from the claim text.