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US 8,916,124 B2Granted
Group III nitride crystal, method for growing the group III nitride crystal, and apparatus for growing the same
AssigneeRicoh Company, Ltd.
InventorsHisashi Minemoto, Osamu Yamada, Takeshi Hatakeyama, Hiroaki Hoshikawa, Yasunori Tokunou
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Abstract
When a group III nitride crystal is grown in a pressurized atmosphere of a nitrogen-containing gas from a melt 50 including at least a group III element, nitrogen and an alkali metal or an alkali earth metal, a melt-holding vessel 160 that holds the above-described melt 50 is swung about two axes different in direction from each other such as an X-axis and a Y-axis.
Claims15
A method for growing a group III nitride crystal, the method comprising:
- growing a group III nitride crystal in a pressurized atmosphere of a nitrogen-containing gas from a melt comprising at least a group III element, nitrogen and an alkali metal or an alkali earth metal;
- and
- swinging a melt-holding vessel about two axes simultaneously, the melt-holding vessel holding, the melt,
- wherein the two axes are different in direction from each other, and
- wherein an angle between the two axes is 90° or approximately 90°.
2 more elements
A method for growing a group III nitride crystal the method comprising:
- growing a group III nitride crystal in a pressurized atmosphere of a nitrogen-containing as from a melt comprising at least a group III element, nitrogen and an alkali metal or an alkali earth metal;
- and
- swinging a melt-holding vessel about two axes simultaneously, the melt-holding vessel holding the melt,
- wherein the two axes are different in direction from each other, and
- wherein at least one in-plane direction position of the melt-holding vessel is locally cooled.
2 more elements
Dependencies are inferred from the claim text.