Flash memory read scrub and channel tracking
AssigneeSeagate Technology LLC
InventorsZhengang Chen, Earl T. Cohen
Life of this patent
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Abstract
An apparatus having a first circuit and a second circuit is disclosed. The first circuit may be configured to (i) read data from a region of a memory circuit during a read scrub of the region and (ii) generate a plurality of statistics based on (a) the data and (b) one or more bit flips performed during an error correction of the data. The memory circuit is generally configured to store the data in a nonvolatile condition. One or more reference voltages may be used to read the data. The second circuit may be configured to (i) update a plurality of parameters of the region based on the statistics and (ii) compute updated values of the reference voltages based on the parameters.
Claims20
An apparatus comprising:
- a first circuit configured to (i) read data from a region of a memory circuit during a read scrub of said region, (ii) perform an error correction of said data and (iii) generate a plurality of statistics based on (a) said data and (b) one or more bit flips performed during said error correction, wherein (a) said memory circuit is configured to store said data in a nonvolatile condition and (b) one or more reference voltages are used to read said data;
- and
- a second circuit configured to (i) update a plurality of parameters of said region based on said statistics and (ii) compute updated values of said reference voltages based on said parameters, wherein said parameters of said region track one or more mean threshold voltages in said region.
A method for read scrub channel tracking, comprising the steps of:
- (A) reading data from a region of a memory circuit during a read scrub of said region, wherein (i) said memory circuit is configured to store said data in a nonvolatile condition and (ii) one or more reference voltages are used to read said data;
- (B) performing an error correction of said data;
- (C) generating a plurality of statistics based on (i) said data and (ii) one or more bit flips performed during said error correction;
- (D) updating a plurality of parameters of said region based on said statistics;
- and
- (E) computing updated values of said reference voltages based on said parameters, wherein said parameters of said region track one or more mean threshold voltages in said region.
An apparatus comprising:
- means for reading data from a region of a memory circuit during a read scrub of said region, wherein (i) said memory circuit is configured to store said data in a nonvolatile condition and (ii) one or more reference voltages are used to read said data;
- means for performing an error correction of said data;
- means for generating a plurality of statistics based on (i) said data and (ii) one or more bit flips performed during said error correction;
- means for updating a plurality of parameters of said region based on said statistics;
- and
- means for computing updated values of said reference voltages based on said parameters, wherein said parameters of said region track one or more mean threshold voltages in said region.
Dependencies are inferred from the claim text.