Semiconductor laser assembly and method for producing a semiconductor laser assembly
AssigneeRobert Bosch GmbH
InventorsMathias Moenster, Hans-Jochen Schwarz
Life of this patent
Estimating the term…
Abstract
A semiconductor laser assembly has at least one semiconductor laser which is designed to emit laser radiation through an exit area and at least one further area, the further area being a part of a surface of the semiconductor laser and/or of the semiconductor laser assembly and the further area is developed to be reflecting to the radiation of at least one specifiable wavelength range. For this purpose, a reflecting metal layer is applied, for example. The semiconductor laser having a laser layer is able to be fastened to a carrier element with the aid of a solder layer.
Claims21
A semiconductor laser assembly, comprising:
- at least one semiconductor laser configured to emit laser radiation through an exit area;
- and
- at least one further area, different from the exit area, configured to reflect at least one specified wavelength range, in which a reflective surface of the at least one further area is perpendicular to a direction of the emitted laser radiation;
- wherein the at least one further area is a part of at least one of a surface of the semiconductor laser and the semiconductor laser assembly.
A semiconductor laser assembly, comprising:
- at least one semiconductor laser configured to emit laser radiation through an exit area;
- wherein at least one further area different from the exit area is configured to reflect at least one specified wavelength range of the laser radiation, the at least one further area being a part of at least one of a surface of the semiconductor laser and the semiconductor laser assembly, and
- wherein the semiconductor laser is situated on a carrier element with the aid of a solder layer, and wherein a distance of the solder layer from the exit area is less than 10 micrometers.
A method for producing a semiconductor laser assembly having at least one semiconductor laser configured to emit laser radiation through an exit area, comprising:
- providing the at least one semiconductor laser;
- covering the exit area of the at least one semiconductor laser using a protective mask;
- applying a reflector layer onto at least one further area different from the exit area, the reflector layer configured to reflect the laser radiation, wherein the at least one further area is a part of at least one of a surface of the semiconductor laser and the semiconductor laser assembly;
- and
- removing the protective mask.
A method for producing a semiconductor laser assembly having at least one semiconductor laser configured to emit laser radiation through an exit area, comprising:
- providing the at least one semiconductor laser;
- covering the exit area of the at least one semiconductor laser using a protective mask;
- applying a reflector layer onto at least one further area, different from the exit area, the reflector layer configured to reflect at least one specified wavelength range of the laser radiation, in which a reflective surface of the at least one further area is perpendicular to a direction of the emitted laser radiation, wherein the at least one further area is a part of at least one of a surface of the semiconductor laser and the semiconductor laser assembly;
- and
- removing the protective mask.
A semiconductor laser assembly, comprising:
- at least one semiconductor laser configured to emit laser radiation through an exit area;
- at least one further area, different from the exit area, configured to receive a reflective layer;
- and
- a protective mask configured to cover the exit area during an application of the reflective layer to the at least one further area;
- wherein the at least one further area is a part of at least one of a surface of the semiconductor laser and the semiconductor laser assembly.
Dependencies are inferred from the claim text.