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US 8,913,452 B2Granted
Semiconductor device and semiconductor memory device
AssigneeSK hynix Inc.
InventorDong-Kyun Kim
Life of this patent
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Abstract
A semiconductor device includes: a data transmission unit configured to transmit differential data between a first data line pair and a second data line pair; and first and second power supply voltage generation units configured to generate precharging voltages to be applied to the first and second data line pairs, respectively.
Claims10
A semiconductor device comprising:
- a data transmission unit configured to transmit differential data between a first data line pair and a second data line pair;
- and
- first and second power supply voltage generation units that separately generate precharging voltages to the first and second data line pairs, respectively, in response to a first precharging control signal and a second precharging control signal that controls a precharging operation regardless of an activation of an input/output control signal.
A semiconductor memory device comprising:
- a bit line sense amplification unit configured to sense and amplify data stored in a memory cell and transmit the amplified data to a first data line pair;
- a data transmission unit configured to transmit the data transmitted through the first data line pair to a second data line pair in response to a transmission control signal;
- an output sense amplification unit configured to sense and amplify the data transmitted through the second data line pair and output the amplified data to a data pad;
- and
- first and second power supply voltage generation units that separately generate precharging voltages to be applied to the first and second data line pairs, respectively, in response to a first precharging control signal and a second precharging control signal that controls a precharging operation regardless of an activation of an input/output control signal.
2 more elements
Dependencies are inferred from the claim text.