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US 8,913,435 B2Granted
Method and device for programming data into non-volatile memories
AssigneeInfineon Technologies AG
InventorsUlrich Backhausen, Thomas Kern, Joerg Syassen
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AssigneeInfineon Technologies AG
InventorsUlrich Backhausen, Thomas Kern, Joerg Syassen
Estimating the term…
A device includes a non-volatile memory and a control unit, wherein the control unit is configured to change over programming of data of the non-volatile memory from a first programming mode to a second, different programming mode based on the occurrence of a control signal.
A method comprising:
a method comprising:
A method comprising:
A device, comprising:
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Dependencies are inferred from the claim text.
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Auxiliary circuits, e.g. for writing into memory: programming or data input circuits
Static stores
About 5 years 7 months of term left · ends 5 Jun 2032 (estimated)
This application claims priority to German Application Number 102010045581.4 filed Sep. 16, 2010.
The present invention relates to the programming of data into non-volatile memories.
Non-volatile memories such as, for example, flash memories, EPROM, EEPROM, etc., are nowadays used very often for storing data. By way of example, in data processing units, communication devices and monitoring or control units such as e.g. for monitoring and controlling means of transport such as automobiles, trains, etc., data are constantly generated and stored in the non-volatile memories.
Further embodiments and developments are the subject matter of the dependent claims or are explained in the following detailed description with reference to the accompanying drawings, in which
FIG. 1 shows a schematic illustration of a device in accordance with one embodiment;
FIG. 2 shows a schematic illustration of a device in accordance with one embodiment; and
Referring to FIG. 1, an explanation will now be given of an embodiment with a device 100 comprising a non-volatile memory 102 and a control unit or controller 104. The non-volatile memory 102 can have memory cells comprising field effect transistors as a data-storing unit. In one embodiment, the non-volatile memory 102 is a flash memory. As already mentioned above, flash memories are memories that can store information by the programming of field effect transistors with a floating gate. Field effect transistors with a floating gate typically have one or a plurality of high-voltage pumps in order to generate the voltages required for programming. The programming of a flash memory can be effected for example proceeding from an erased state (erase state) in which all the cells have a logic zero. It goes without saying, however, that, in other embodiments, programming can be effected proceeding from an erased state in which all the cells have a logic one. The non-volatile memory 102 can be subdivided into one or a plurality of blocks, that can in turn be divided into a plurality of subunits, for example pages, sectors or blocks. Typically, in a flash memory, programming is carried out for an entire page and an erase operation is carried out for an entire block or sector.
The control unit 104 is configured to control the non-volatile memory 102. The control unit 104 can furthermore also provide even further functions that can relate to the non-volatile memory 102 or can also lie outside the non-volatile memory 102. The control unit 104 can be composed of a plurality of units that can furthermore also be spatially separated from one another. In one embodiment, the control unit 104 can have one or a plurality of interfaces with corresponding functionalities.
The control unit 104 can be programmable or partly programmable by means of software or firmware or be embodied purely in terms of hardware, for example in the form of a state machine. In one embodiment, the control unit 104 can have one or a plurality of registers for storing information.