Semiconductor memory device and method of operating the same
AssigneeSK hynix Inc.
InventorHwang Huh
Life of this patent
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Abstract
A semiconductor memory device of the present invention includes a memory cell array with cell strings having word lines stacked on a substrate and a vertical channel layer formed through the word lines, a peripheral circuit configured to select one of the word lines and perform a program operation on the selected word line, and a control circuit configured to control the peripheral circuit to perform the program operation by applying a program voltage to a word line selected for the program operation, applying a ground voltage to a word line of which a program operation has been completed and applying a pass voltage to the other word lines.
Claims9
A semiconductor memory device comprising:
- a memory cell array with cell strings having word lines stacked on a substrate and a vertical channel formed through the word lines;
- a peripheral circuit configured to select one of the word lines and perform a program operation on the selected word line;
- and
- a control circuit configured to control the peripheral circuit to perform the program operation by applying a ground voltage to a first group of word lines coupled to memory cells of which a program operation has been completed, applying a pass voltage to a second group of word lines coupled to memory cells of which a program operation has not been completed, and applying a program voltage to the selected word line coupled to selected memory cells.
A method of operating a semiconductor memory device, the method comprising:
- applying a ground voltage to a first group of word lines coupled to memory cells of which a program operation has been completed;
- applying a pass voltage to a second group of word lines and a selected word line, wherein the second group of word lines are coupled to memory cells of which a program operation has not been completed, and the selected word line is coupled to selected memory cells;
- and
- applying a program voltage to the selected word line.
A method of operating a semiconductor memory device, the method comprising:
- applying a ground voltage to word lines coupled to memory cells of which a program operation has been completed during a program operation by applying a program voltage to a selected word line and a pass voltage to remaining word lines,
- wherein the program operation is performed on the word lines in an order from a word line adjacent to a source select line to a word line adjacent to a drain select line.
Dependencies are inferred from the claim text.