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US 8,913,422 B2Granted
Decreased switching current in spin-transfer torque memory
AssigneeIntel Corporation
InventorsElijah V. Karpov, Brian S. Doyle, Kaan Oguz, Satyarth Suri, Robert S. Chau, Charles C. Kuo, Mark L. Doczy, David L. Kencke
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Abstract
Switching current in Spin-Transfer Torque Memory (STTM) can be decreased. A magnetic memory cell is driven with a first pulse on a write line of the memory cell to heat the cell. The cell is then driven with a second pulse on the write line to set the state of the cell.
Claims20
A method comprising:
- driving a magnetic memory cell with a first pulse on a write line of the memory cell to heat the cell;
- driving the cell with a second pulse on the write line to set the state of the cell wherein the second pulse is wherein the second pulse is sloped downward from an initial high voltage to zero voltage.
An apparatus comprising:
- a memory cell having a magnetic pinned layer and a magnetic free layer;
- electrodes coupled to the magnetic free layer to set a magnetic state of the free layer;
- and
- thermal insulation side walls around the memory cell, the thermal insulation comprising chalcogenide compounds.
1 more element
An apparatus comprising:
- a processor;
- and
- a memory array having:
- a plurality of memory cells coupled to the processor, each having a magnetic pinned layer and a magnetic free layer and electrodes coupled to the magnetic free layer to set a magnetic state of the free layer;
- a read/write controller to drive write lines coupled to an electrode of a each of the plurality of memory cells with a first pulse to heat the cell and with a second pulse to set the state of the cell wherein the second pulse is sloped downward from an initial high voltage to zero voltage;
- and
- row and column selectors between the read write controller and the plurality of memory cells to control access to each memory cell by the read/write controller.
4 more elements
Dependencies are inferred from the claim text.