Confined defect profiling within resistive random memory access cells

A method of fabricating a resistive random access memory cell, the method comprising:

• providing a first layer comprising aluminum oxide, the first layer having a thickness of between 20 Angstroms and 100 Angstroms;
• introducing nitrogen into the first layer, wherein introducing nitrogen comprises plasma nitridation using ammonia and wherein the first layer comprises between about 15 atomic percent and 25 atomic percent on average after introducing nitrogen;
• depositing a second layer comprising aluminum oxide over the first layer, the second layer having a thickness of between 20 Angstroms to 100 Angstroms;
• depositing a third layer comprising titanium nitride over the second layer;
• and
• annealing the first layer, the second layer, and the third layer at a temperature between 700° C. and 800° C. for a time period between 0.5 minutes and 2 minutes,
• wherein annealing results in transferring nitrogen from the first layer and into the second layer while substantially no nitrogen is transferred from the second layer and into the third layer, and
• wherein, after annealing, the second layer has a lowest nitrogen concentration zone between the first layer and the second layer,
• the lowest nitrogen concentration zone having a nitrogen concentration of less than 10 atomic percent.

A resistive random access memory comprising:

• a first layer comprising aluminum, oxygen, and nitrogen, the first layer having a thickness of between about 20 Angstroms to about 100 Angstroms;
• a second layer comprising aluminum, oxygen, and nitrogen, the second layer disposed over the first layer, the second layer having a thickness of between about 20 Angstroms to about 100 Angstroms;
• and
• a third layer comprising titanium nitride, the third layer disposed over the second layer,
• wherein the second layer has a lowest nitrogen concentration zone within the first layer and the second layer,
• the lowest nitrogen concentration zone having a nitrogen concentration of less than 10 atomic percent.