Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same

A plurality of nonvolatile memory cells comprising:

• a first plurality of substantially parallel, substantially coplanar conductors extending in a first direction;
• a plurality of diodes;
• a plurality of reversible resistance-switching elements each comprising tantalum;
• and
• a second plurality of substantially parallel, substantially coplanar conductors extending in a second direction different from the first direction;
• wherein, in each memory cell, one of the diodes and one of the reversible resistance-switching elements are arranged in series between one of the first conductors and one of the second conductors, with a silicide-forming metal disposed between the diode and the reversible resistance-switching element;
• and
• wherein each reversible resistance-switching element is formed using a selective deposition process.

A monolithic three dimensional memory array comprising:

• a first memory level formed above a substrate, the first memory level comprising:
• a plurality of memory cells, wherein each memory cell of the first memory level comprises:
• a steering element;
• a reversible resistance-switching element comprising tantalum coupled to the steering element and formed using a selective deposition process;
• and
• a silicide-forming metal layer disposed between the steering element and the reversible resistance-switching element;
• and
• a second memory level monolithically formed above the first memory level.